Title :
Microcavity GalaAs/GaAs surface-emitting laser with Ith = 6 mA
Author :
Iga, Kenichi ; Kinoshita, Shosuke ; Koyama, Fumio
Author_Institution :
Tokyo Institute of Technology, Yokohama, Japan
Abstract :
A circular buried microcavity 7 ¿m long and 6 ¿m in diameter has been realised. We obtained Ith = 6mA, ¿d = 9% and peak power ¿1 mW at 20.5°C at single mode. The first CW operation of a GaAlAs/GaAs surface-emitting laser with Ith = 4.5 mA at 77 K was also realised.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; 1 mW; 20.5 degC; 4.5 mA; 6 mA; 77 K; 9 percent; CW operation; GaAlAs-GaAs; circular buried microcavity; peak power; single mode; surface-emitting laser; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870095
