• DocumentCode
    1029493
  • Title

    Microcavity GalaAs/GaAs surface-emitting laser with Ith = 6 mA

  • Author

    Iga, Kenichi ; Kinoshita, Shosuke ; Koyama, Fumio

  • Author_Institution
    Tokyo Institute of Technology, Yokohama, Japan
  • Volume
    23
  • Issue
    3
  • fYear
    1987
  • Firstpage
    134
  • Lastpage
    136
  • Abstract
    A circular buried microcavity 7 ¿m long and 6 ¿m in diameter has been realised. We obtained Ith = 6mA, ¿d = 9% and peak power ¿1 mW at 20.5°C at single mode. The first CW operation of a GaAlAs/GaAs surface-emitting laser with Ith = 4.5 mA at 77 K was also realised.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; 1 mW; 20.5 degC; 4.5 mA; 6 mA; 77 K; 9 percent; CW operation; GaAlAs-GaAs; circular buried microcavity; peak power; single mode; surface-emitting laser; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870095
  • Filename
    4257374
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1029493