DocumentCode :
1029500
Title :
Transport properties of Au GaAs Schottky barriers
Author :
Padovani, F.A.
Volume :
14
Issue :
9
fYear :
1967
fDate :
9/1/1967 12:00:00 AM
Firstpage :
633
Lastpage :
633
Keywords :
Electric variables measurement; Gallium arsenide; Germanium alloys; Germanium silicon alloys; Gold; Hall effect; Interface states; Schottky barriers; Silicon germanium; Temperature distribution;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1967.16069
Filename :
1474792
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1029500
