Title :
An investigation of the interface states of the germanium-silicon alloyed heterojunction
Author :
Reenstra, A.L. ; Thompson, H.W., Jr.
fDate :
9/1/1967 12:00:00 AM
Keywords :
Frequency; Germanium alloys; Germanium silicon alloys; Heterojunctions; Interface states; Laboratories; P-n junctions; Semiconductor diodes; Silicon germanium; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1967.16070
