DocumentCode
1029528
Title
Deep impurity band effects on transient behavior of GaAs p-i-n devices
Author
Cohen, B.G.
Volume
14
Issue
9
fYear
1967
fDate
9/1/1967 12:00:00 AM
Firstpage
634
Lastpage
634
Keywords
Capacitance; Frequency; Gallium arsenide; Impurities; Optical modulation; Optical waveguides; P-i-n diodes; PIN photodiodes; Phase modulation; Waveguide junctions;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1967.16072
Filename
1474795
Link To Document