DocumentCode

1029553

Title

Measured dependence of lifetime upon local defect density and temperature in depletion layers of epitaxial silicon diodes

Author

Scharfetter, D.L. ; Johnston, Roy L.

Volume

14

Issue

9

fYear

1967

fDate

9/1/1967 12:00:00 AM

Firstpage

634

Lastpage

634

Keywords

Cadmium; Current density; Current measurement; Density measurement; Diodes; Position measurement; Rectifiers; Silicon; Temperature dependence; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1967.16074

Filename

1474797