Title :
Resonant tunnelling condition in a one-dimensional rectangular double-barrier structure
Author :
Yamamoto, Hiroshi
Author_Institution :
Fukui University, Department of Electronics, Fukui, Japan
Abstract :
The strictly analytical expression for the resonant tunnelling condition for a symmetrical rectangular double-barrier structure is given and is compared with Kane´s equation, known as the resonance condition.
Keywords :
semiconductor-insulator boundaries; tunnelling; Kane´s equation; analytical expression; one-dimensional rectangular double-barrier structure; resonance condition; resonant tunnelling condition; semiconductor insulator boundaries;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870114
