Field-effect transistor (FET) bibliography

This list of references contains over 200 entries, and no claims are made as to its completeness. The references for the era 1939 through 1963 refer to field-effect transistors, in general, and were obtained mostly from J. T. Wallmark\´s article, "The Field-Effect Transistor--An Old Device with New Promise," IEEE Spectrum, vol. 1, pp. 182-191, March 1964. The subsequent references (1964 to mid-1967) relate predominantly to insulated-gate field-effect transistors, designated in the literature by IG-FETs. Often, more specific terms are used: for a structure consisting of a metal gate, insulating layer, and semiconductor substrate, the term MIS-FET appeared in the literature. If the insulating layer is an oxide, the terms MOS-FET or MOST are widely used. If the IG-FETs are fabricated by the so-called "thin-film" process, then they are called thin-film transistors, and are designated in the literature by TFTs; however, not all TFTs are FETs