Title :
Analytical model of a semiconductor optical amplifier
Author :
Brosson, Philippe
Author_Institution :
Alcatel Alsthom Recherche, Marcoussis, France
fDate :
1/1/1994 12:00:00 AM
Abstract :
The spatial dependence of the material gain is introduced in the model of a semiconductor optical amplifier. Analytical expressions of the profiles of the carrier density, spontaneous emission, and amplified fields are obtained for amplifiers with arbitrary facet reflectivities. The nonuniformity of the carrier density is demonstrated in the case of low facet reflectivities. The model predicts the output saturation power and gain ripple, with good agreement with experimental results in resonant and traveling-wave amplifiers. Very low-gain ripple measured in low facet reflectivities amplifiers is explained by the model. A comparison with the uniform gain model shows that important deviations can occur in the case of low facet reflectivities. It is also shown that with the currently achievable low facet reflectivities, the maximum available gain is limited by spontaneous emission
Keywords :
carrier density; laser theory; reflectivity; semiconductor device models; semiconductor lasers; amplified fields; analytical model; arbitrary facet reflectivities; carrier density; gain ripple; low facet reflectivities; material gain; maximum available gain; nonuniformity; output saturation power; resonant amplifiers; semiconductor optical amplifier; spatial dependence; spontaneous emission; traveling-wave amplifiers; Analytical models; Charge carrier density; Optical amplifiers; Optical materials; Predictive models; Reflectivity; Resonance; Semiconductor materials; Semiconductor optical amplifiers; Spontaneous emission;
Journal_Title :
Lightwave Technology, Journal of
