• DocumentCode
    1029791
  • Title

    Anomalous oscillation in depletion-mode MOSFETs at low temperature

  • Author

    Carruthers, C. ; Mavor, J.

  • Author_Institution
    University of Edinburgh, Department of Electrical Engineering, Edinburgh, UK
  • Volume
    23
  • Issue
    5
  • fYear
    1987
  • Firstpage
    178
  • Lastpage
    179
  • Abstract
    Results are presented which show unusual behaviour in silicon, n-channel depletion-mode MOSFETs having phosphorus doping. At 77 K these devices exhibit a low-frequency oscillation whereby the MOSFET channel periodically turns high resistance for a short period.
  • Keywords
    elemental semiconductors; insulated gate field effect transistors; oscillations; phosphorus; silicon; 77 K; Si:P; depletion-mode MOSFETs; high resistance; low temperature; low-frequency oscillation; n-channel;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870126
  • Filename
    4257418
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1029791