• DocumentCode
    1029799
  • Title

    Planar TJS lasers fabricated in semi-insulating GaAs substrates for optoelectronic integrated circuits

  • Author

    Ishii, M. ; Kamon, K. ; Shimazu, M. ; Mihara, Mitsuharu ; Kumabe, H. ; Isshiki, Kenji

  • Author_Institution
    Optoelectronics Joint Research Laboratory, Kawasaki, Japan
  • Volume
    23
  • Issue
    5
  • fYear
    1987
  • Firstpage
    179
  • Lastpage
    181
  • Abstract
    TJS lasers with a planar structure were fabricted by growing GaAs-AlGaAs double heterstructures in reverse-mesa-etched shapes in semi-insulting GaAs substrates. Continuous single-mode operation was achieved at temperatures up to 110°C. The minimum threshold current was 25 mA at 25°C.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; laser modes; semiconductor junction lasers; 25 mA; 25 to 110 degC; GaAs substrates; GaAs-AlGaAs double heterostructures; III-V semiconductors; continuous single mode operation; optoelectronic integrated circuits; planar structure; reverse-mesa-etched shapes; semiconductor lasers; semiinsulating type; transverse junction stripe type;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870127
  • Filename
    4257419
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1029799