• DocumentCode
    1029846
  • Title

    Instability in vacuum deposited silicon oxide

  • Author

    Swystun, Eugene J. ; Tickle, Andrew C.

  • Author_Institution
    University of Saskatchewan, Saskatoon, Canada
  • Volume
    14
  • Issue
    11
  • fYear
    1967
  • fDate
    11/1/1967 12:00:00 AM
  • Firstpage
    760
  • Lastpage
    764
  • Abstract
    The instability of vacuum deposited SiO2in field-effect transistors is described. Results for an Al-SiO2-CdSe system are accounted for by a model in which mobile ions are located predominantly in traps at the SiO2interfaces. The asymmetrical drift rate observed was accounted for by a difference in activation energy for release of ions from the two interfaces. The absorption of water vapor caused an increase in both the magnitude of the drift and the transconductance of the transistor during the drift.
  • Keywords
    Capacitance-voltage characteristics; Circuit testing; Dielectric substrates; Dielectrics and electrical insulation; FETs; Monitoring; Reproducibility of results; Silicon; Thin film transistors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1967.16103
  • Filename
    1474826
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1029846