Title :
High-speed modulation characteristics of a GaSb/AlGaSb multiquantum-well laser diode
Author :
Toba, H. ; Nosu, K.
Author_Institution :
NTT Electrical Communications Laboratories, Yokosuka, Japan
Abstract :
The high-speed modulation characteristics of a GaSb/AIGaSb multiquantum-well laser diode (¿ = 1.66¿m) are investigated. The longitudinal mode spectra over 1GHz modulation with quasi-single-mode and small frequency `chirping¿ were confirmed.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; laser modes; laser transitions; optical communication equipment; optical modulation; semiconductor junction lasers; 1 GHz; 1.66 micron; GaSb-AlGaSb; III-V semiconductors; MQW; chirping; high-speed modulation characteristics; longitudinal mode spectra; multiquantum-well laser diode; optical communication equipment; quasisingle mode; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870133
