DocumentCode :
1029865
Title :
Surface states and 1/f noise in MOS transistors
Author :
Abowitz, Gerald ; Arnold, Emil ; Leventhal, Edwin A.
Author_Institution :
Xerox Corporation, Rochester, N. Y.
Volume :
14
Issue :
11
fYear :
1967
fDate :
11/1/1967 12:00:00 AM
Firstpage :
775
Lastpage :
777
Abstract :
Surface-state density in n-channel MOS transistors operating in the inversion mode has been determined from the channel conductance and related to 1/ 
noise in these devices. It has been found that the noise is proportional to the surface-state density at the Fermi level. The surface orientation and temperature affect the noise output only indirectly, through their influence on the surface-state density and the position of the Fermi level at the surface.
noise in these devices. It has been found that the noise is proportional to the surface-state density at the Fermi level. The surface orientation and temperature affect the noise output only indirectly, through their influence on the surface-state density and the position of the Fermi level at the surface.Keywords :
Atmospheric measurements; Capacitance-voltage characteristics; Charge measurement; Current measurement; Density measurement; Electron mobility; Low-frequency noise; MOSFETs; Noise level; Semiconductor device noise;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1967.16105
Filename :
1474828
Link To Document :
