• DocumentCode
    1029869
  • Title

    Influence of illumination on MIS capacitances in the strong inversion region

  • Author

    Grosvalet, Jean ; Jund, Christian

  • Author_Institution
    Compagnie Générale de Télégraphie sans Fil (CSF), Centre de Recherches Physico-Chimiques, Puteaux, France
  • Volume
    14
  • Issue
    11
  • fYear
    1967
  • fDate
    11/1/1967 12:00:00 AM
  • Firstpage
    777
  • Lastpage
    780
  • Abstract
    A simple analysis is presented of the effect of illumination on MIS capacitance in the strong inversion region. The two mechanisms responsible for the increase of capacitance under illumination are described: the decrease of the time constant generation of the inversion layer, and the decrease of the space-charge region under illumination. The theoretical results are compared with the experimental data on silicon and tellurium MIS capacitances.
  • Keywords
    Capacitance measurement; Dielectrics; Equivalent circuits; Frequency measurement; Lighting; Signal generators; Silicon; Surface treatment; Tellurium; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1967.16106
  • Filename
    1474829
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1029869