Title :
Low-threshold operation of 1.5μm buried-heterostructure DFB lasers grown entirely by low-pressure MOVPE
Author :
Itaya, Y. ; Oishi, Masayuki ; Nakao, Masahiro ; Sato, Kiminori ; Kondo, Yuta ; Imamura, Yusuke
Author_Institution :
NTT Electrical Communications Laboratories, Atsugi, Japan
Abstract :
Buried-heterostructure (BH) distributed feedback (DFB) lasers have been fabricated by a three-step low-pressure MOVPE process. The CW threshold currents were as low as 15mA and a high differential efficiency of 0.21 W/A was obtained. The laser operated in a stable single longitudinal mode over a wide range of driving currents and under highspeed direct modulation.
Keywords :
distributed feedback lasers; laser modes; laser transitions; optical modulation; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.5 micron; 15 mA; CW threshold currents; DFB lasers; buried-heterostructure; distributed feedback; high-speed direct modulation; low-pressure MOVPE; semiconductor lasers; stable single longitudinal mode; vapour phase epitaxial growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870136
