• DocumentCode
    10299
  • Title

    Characterization of the First FBK High-Density Cell Silicon Photomultiplier Technology

  • Author

    Piemonte, C. ; Ferri, Alessandro ; Gola, Alberto ; Pro, T. ; Serra, N. ; Tarolli, Alessandro ; Zorzi, Nicola

  • Author_Institution
    Fondazione Bruno Kessler, Trento, Italy
  • Volume
    60
  • Issue
    8
  • fYear
    2013
  • fDate
    Aug. 2013
  • Firstpage
    2567
  • Lastpage
    2573
  • Abstract
    In this paper, we present the results of the characterization of the first high-density (HD) cell silicon photomultipliers produced at FBK. The most advanced prototype manufactured with this technology has a cell size of 15 × 15 μm2 featuring a nominal fill factor of 48%. To reach this high area coverage, we developed a new border structure to confine the high electric-field region of each single-photon avalanche diode. The measured detection efficiency approaches 30% in the green part of the light spectrum and it is above 20% from 400 to 650 nm. At these efficiency values, the correlated noise is very low, giving an excess charge factor below 1.1. We coupled a 2 × 2 × 10- mm3 LYSO scintillator crystal to a 2.2 × 2.2- mm2 silicon photomultiplier, obtaining very promising results for PET application: energy resolution of less than 11% full-width at half maximum (FWHM) with negligible loss of linearity and coincidence resolving time of 200-ps FWHM at 20°C.
  • Keywords
    avalanche diodes; elemental semiconductors; photomultipliers; silicon; FBK; LYSO scintillator crystal; correlated noise; electric-field region; full-width at half maximum; high-density cell silicon photomultiplier technology; nominal fill factor; single-photon avalanche diode; temperature 20 degC; Excess noise factor; positron emission tomography; silicon photomultipliers;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2013.2266797
  • Filename
    6547648