• DocumentCode
    1029996
  • Title

    Effects of deposition and oxidation processes on magnetic and structural properties of iron oxide films

  • Author

    Chen, Mao-Min ; Ortiz, Carmen ; Lim, Grace ; Sigsbee, Ray ; Castillo, Gilbert ; Sigsbee, R. ; Castillo, G.

  • Author_Institution
    IBM Magnetic Recording Institute
  • Volume
    23
  • Issue
    5
  • fYear
    1987
  • fDate
    9/1/1987 12:00:00 AM
  • Firstpage
    3423
  • Lastpage
    3425
  • Abstract
    Osmium doped (0.75 at.%) iron oxide films were reactively sputter deposited onto Si substrates in an Ar + O2gas environment. The magnetic and structural properties of the as-deposited films depend critically on deposition process parameters such as O2flow rate, chamber pressure, substrate temperature, RF power and substrate rotation speed. The deposition process window has been determined for which only the spinel structure was observed. X-ray diffraction indicated films grown at a low O2flow rate of 3.0 sccm and a substrate temperature of 230°C had more random orientation and a lattice parameter closer to that of the bulk Fe3O4value. This condition produced a high saturation moment of 410 emu/cc. Increasing O2flow rate induced preferential
  • Keywords
    Argon; Iron; Magnetic films; Magnetic properties; Oxidation; Radio frequency; Saturation magnetization; Semiconductor films; Temperature dependence; X-ray diffraction;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1987.1065549
  • Filename
    1065549
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1029996