Title :
Complementary silicon MESFET technology
Author :
Bohlin, K.E. ; Tove, P.A. ; Magnusson, U. ; Tiren, J.
Author_Institution :
Institute of Technology, University of Uppsala, Electronics Department, Uppsala, Sweden
Abstract :
Prototype complementary silicon MESFET inverters and rign oscillators were fabricated. N-channel transistors have platinum gates and erbium source and drain contacts, while for the p-channel devices the roles of the two metals are reversed. Silicon-on-sapphire substrates were used to provide good device isolation and realisation of normally-off operation.
Keywords :
Schottky gate field effect transistors; elemental semiconductors; field effect integrated circuits; integrated circuit technology; silicon; Er source contacts; MESFET technology; Pt gates; SOS substrates; Si-Al2O3; complementary type; device isolation; drain contacts; elemental semiconductors; inverters; monolithic IC; ring oscillators;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870144
