• DocumentCode
    1030290
  • Title

    Garnet films for Bloch line memories

  • Author

    Ferrand, B. ; Armand, M.F. ; Daval, J. ; Arnaud, L.

  • Author_Institution
    D.LETI, IRDI, Commissariat à l´´Energie Atomique, GRENOBLE Cedex, France
  • Volume
    23
  • Issue
    5
  • fYear
    1987
  • fDate
    9/1/1987 12:00:00 AM
  • Firstpage
    3391
  • Lastpage
    3392
  • Abstract
    Bloch Line Memory (BLM) requirements are studied. Several LPE grown garnet films compositions have been investigated in order to satisfy most of these requirements. (YSmBi)3(FeGa)5O12composition seems to be very promising for BLM studies.
  • Keywords
    Bloch lines; Garnet films/devices; Bismuth; Damping; Gallium; Garnet films; Magnetic confinement; Magnetic materials; Magnetization; Magnetostriction; Read-write memory; Writing;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1987.1065579
  • Filename
    1065579
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1030290