• DocumentCode
    1030328
  • Title

    SOI MOSFET in weak inversion and weak accumulation

  • Author

    Balestra, F. ; Brini, J.

  • Author_Institution
    ENSERG/INPG, Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs, UA-CNRS 840, Grenoble, France
  • Volume
    23
  • Issue
    5
  • fYear
    1987
  • Firstpage
    211
  • Lastpage
    213
  • Abstract
    The subthreshold current of silicon-on-insulator (SOI) MOSFETs has been investigated. The importance of the back interface (silicon film/back insulator) on the subthreshold slope factors is emphasised. On the other hand, the dependence of the slope factors on the back insulator thickness is demonstrated and a comparison of the slope factors for the case of the weak inversion and weak accumulation has been carried out.
  • Keywords
    insulated gate field effect transistors; semiconductor-insulator boundaries; SOI MOSFET; Si; back insulator thickness; subthreshold current; subthreshold slope factors; weak accumulation; weak inversion;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870149
  • Filename
    4257475
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1030328