• DocumentCode
    1030347
  • Title

    On the field-effect transistor characteristics

  • Author

    Wedlock, B.D.

  • Volume
    15
  • Issue
    3
  • fYear
    1968
  • fDate
    3/1/1968 12:00:00 AM
  • Firstpage
    181
  • Lastpage
    182
  • Abstract
    A theoretical analysis demonstrates that the relationship between IDand VDSfor one value of VGSis sufficient to completely describe the device behavior for any channel impurity profile. A simple graphical procedure is given to generate a complete set of characteristics from the results at one value of VGS. Measurements on an n -channel FET are given to support the theoretical conclusion and to demonstrate the graphical technique.
  • Keywords
    Character generation; FETs; Geometry; Impurities; Integral equations; Marine vehicles; Mathematical analysis; Performance analysis; Poisson equations; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1968.16157
  • Filename
    1475059
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1030347