DocumentCode
1030355
Title
Improved ferroelectric field-effect devices
Author
Mccusker, J.H. ; Perlman, S.S.
Volume
15
Issue
3
fYear
1968
fDate
3/1/1968 12:00:00 AM
Firstpage
182
Lastpage
183
Abstract
Postfabrication heat treatments in dry helium are shown to produce greater than tenfold improvement in the range of adaptability of the transfer characteristics of adaptive thin-film (Te or CdSe) resistors and transistors. Improved device performance is attributed to removal of water vapor from the ferroelectric (TGS) material.
Keywords
FETs; Ferroelectric materials; Helium; Impurities; Insulation; Materials science and technology; Semiconductor materials; Semiconductor thin films; Thin film devices; Thin film transistors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1968.16158
Filename
1475060
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