• DocumentCode
    1030369
  • Title

    Broadband 1.5μm GaInAsP travelling-wave laser amplifier with high-saturation output power

  • Author

    Saitoh, T. ; Mukai, T.

  • Author_Institution
    NTT, Electrical Communications Laboratories, Musashino, Japan
  • Volume
    23
  • Issue
    5
  • fYear
    1987
  • Firstpage
    218
  • Lastpage
    219
  • Abstract
    A 1.5μm GaInAsP travelling-wave amplifier (TWA), which has a residual facet reflectivity of 0.04% is realised through the application of SiOx antireflection coatings on both facets. The TWA has wide signal gain spectra with undulation of 1.5dB within one free spectral range for a 24.5dB signal gain. The saturation output power of the 24.5dB signal gain. The saturation output power of the TWA fora 20dB signal gain is +7dBm, which is 20dB greater than that provided by the Fabry-Perot amplifier.
  • Keywords
    III-V semiconductors; antireflection coatings; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; wideband amplifiers; 1.5 micron; 24.5 dB; GaInAsP; GaInAsP travelling-wave laser amplifier; SiOx antireflection coatings; TWA; high-saturation output power; optical repeaters; residual facet reflectivity of 0.04%; signal gain; signal gain spectra;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870153
  • Filename
    4257479
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1030369