Title :
Extremely high power 1.48 μm GaInAsP/InP GRIN-SCH strained MQW lasers
Author :
Kasukawa, A. ; Namegaya, T. ; Iwai, N. ; Yamanaka, N. ; Ikegami, Y. ; Tsukiji, N.
Author_Institution :
Res. & Dev. Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
A record CW output power of 360 mW at 25/spl deg/C was achieved by investigating the structure of optical confinement layer in 1.48 μm GRIN-SCH MQW lasers. It is experimentally demonstrated that the use of a wide bandgap and thin SCH layer gives a high differential quantum efficiency without expense of threshold current. Low driving currents, 195 mA for 100 mW, 450 mA for 200 mW and 890 mA for 300 mW, were obtained in the optimized cavity lengths.
Keywords :
III-V semiconductors; gallium arsenide; gradient index optics; indium compounds; laser transitions; semiconductor lasers; 1.48 micron; 100 mW; 195 mA; 200 mW; 25 degC; 300 mW; 360 mW; 450 mA; 890 mA; CW output power; GaInAsP-InP; GaInAsP/InP GRIN-SCH strained MQW lasers; extremely high power; high differential quantum efficiency; low driving currents; optical confinement layer; optimized cavity lengths; thin SCH layer; threshold current; wide bandgap; Absorption; Carrier confinement; Indium phosphide; Optical losses; Optical waveguides; Photonic band gap; Power generation; Power lasers; Quantum well devices; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
