Title :
High-power GaInAsSb-AlGaAsSb multiple-quantum-well diode lasers emitting at 1.9 μm
Author :
Choi, H.K. ; Turner, G.W. ; Eglash, S.J.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
High-power diode lasers emitting at /spl sim/1.9 μm have been fabricated from a quantum-well heterostructure having an active region consisting of five GaInAsSb wells and six AlGaAsSb barriers. For devices 300 μm wide and 1000 μm long, single-ended output power as high as 1.3 W cw has been obtained with an initial differential quantum efficiency of 47%. The pulsed threshold current density is as low as 143 A/cm2 for 2000-μm-long devices.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium antimonide; laser transitions; semiconductor lasers; 1.3 W; 1.9 micron; 1000 micron; 2000 micron; 300 micron; 47 percent; GaInAsSb-AlGaAsSb; active region; high-power GaInAsSb-AlGaAsSb multiple-quantum-well diode lasers; initial differential quantum efficiency; pulsed threshold current density; quantum-well heterostructure; single-ended output power; Biological materials; Capacitive sensors; Conducting materials; Diode lasers; Optical materials; Power generation; Quantum well devices; Quantum well lasers; Substrates; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
