• DocumentCode
    1030403
  • Title

    Ion-implanted P-channel GaAs MESFET using Schottky barrier height tailoring

  • Author

    Baier, S.M. ; Lee, G.Y. ; Chung, Hyun Kyu ; Fure, B.J. ; Cirillo, N.C.

  • Author_Institution
    Honeywell Inc., Physics Sciences Center, Bloomington, USA
  • Volume
    23
  • Issue
    5
  • fYear
    1987
  • Firstpage
    223
  • Lastpage
    225
  • Abstract
    A new P-channel GaAs MESFET has been fabricated by ion implantation. The low P-GaAs Schottky barrier height has been increased using a barrier tailoring technique, resulting in substantially improved device characteristics. Extrinsic transconductances as high as 22 mS/mm are obtained from 1¿m P-MESFETs at room temperature with gate voltage swings in excess of 1 V.
  • Keywords
    III-V semiconductors; Schottky effect; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated circuit technology; ion implantation; semiconductor technology; CMES; GaAs; P-GaAs Schottky barrier height; P-channel GaAs MESFET; Schottky barrier height tailoring; complementary MESFET technology; device characteristics; gate voltage swings; ion implantation; room temperature; semiconductors; transconductances;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870157
  • Filename
    4257483
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1030403