Title :
Ion-implanted P-channel GaAs MESFET using Schottky barrier height tailoring
Author :
Baier, S.M. ; Lee, G.Y. ; Chung, Hyun Kyu ; Fure, B.J. ; Cirillo, N.C.
Author_Institution :
Honeywell Inc., Physics Sciences Center, Bloomington, USA
Abstract :
A new P-channel GaAs MESFET has been fabricated by ion implantation. The low P-GaAs Schottky barrier height has been increased using a barrier tailoring technique, resulting in substantially improved device characteristics. Extrinsic transconductances as high as 22 mS/mm are obtained from 1¿m P-MESFETs at room temperature with gate voltage swings in excess of 1 V.
Keywords :
III-V semiconductors; Schottky effect; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated circuit technology; ion implantation; semiconductor technology; CMES; GaAs; P-GaAs Schottky barrier height; P-channel GaAs MESFET; Schottky barrier height tailoring; complementary MESFET technology; device characteristics; gate voltage swings; ion implantation; room temperature; semiconductors; transconductances;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870157
