DocumentCode :
1030407
Title :
Weak-Inversion Measurement Circuit for Miniature Electrical Capacitance Tomography
Author :
Phua, Tin Nguang ; York, Trevor
Author_Institution :
ARM Ltd., Cambridge
Volume :
57
Issue :
2
fYear :
2008
Firstpage :
379
Lastpage :
385
Abstract :
This paper describes the design of the front-end measurement circuit for a miniature electrical capacitance tomography system. This is based on a charge-transfer circuit and is implemented as a custom CMOS integrated circuit that is mounted close to the electrodes to reduce parasitic capacitance. The design has been informed by a 3-D finite-element simulation using the Ansoft Maxwell software. Simulation results suggest that, with averaging, a minimum measurable capacitance change of 100 aF (10-16F) is possible. This paper presents an analytical description of the circuit which, uniquely for such an application, is based on MOSFETs operating in weak inversion. The system has an average sensitivity of 40 mV/fF and can deliver an unprecedented 6250 measurement frames/s. The sensor comprises eight electrodes that are formed on a conical orifice, fabricated using ultrasonic drilling and a minimum diameter of 0.5 mm, through a ceramic substrate. The cross-sectional tomographic images of static objects, which are reconstructed offline, are presented.
Keywords :
CMOS integrated circuits; capacitive sensors; computerised tomography; finite element analysis; image reconstruction; 3D finite-element simulation; Ansoft Maxwell software; CMOS integrated circuit; MOSFETs; ceramic substrate; charge-transfer circuit; conical orifice; cross-sectional tomographic images; front-end measurement circuit; image reconstruction; miniature electrical capacitance tomography; ultrasonic drilling; weak-inversion measurement circuit; Application software; CMOS integrated circuits; Capacitance measurement; Circuit simulation; Electric variables measurement; Electrical capacitance tomography; Electrodes; Finite element methods; Integrated circuit measurements; Parasitic capacitance; CMOS; VLSI; custom silicon; electrical capacitance tomography (ECT); image reconstruction; miniature sensor;
fLanguage :
English
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9456
Type :
jour
DOI :
10.1109/TIM.2007.910091
Filename :
4427396
Link To Document :
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