• DocumentCode
    1030476
  • Title

    Dynamic spectral linewidth in InGaAsP multiquantum-well lasers grown by liquid-phase epitaxy

  • Author

    Sasai, Y. ; Ohya, J. ; Ogura, M. ; Kajiwara, Toshiya

  • Author_Institution
    Matsushita Electric Industrial Co. Ltd., Opto-Electronics Laboratory, Semiconductor Research Center, Moriguchi, Japan
  • Volume
    23
  • Issue
    5
  • fYear
    1987
  • Firstpage
    232
  • Lastpage
    233
  • Abstract
    Dynamic spectral linewidths in InGaAsP multiquantum-well buried-heterostructure (BH) lasers grown by liquid-phase epitaxy (LPE) have been investigates. The results showed that the linewidths in the MQW lasers were smaller than in conventional DFB-BH lasers and that they decreased as the well width became smaller.
  • Keywords
    III-V semiconductors; crystal growth from melt; gallium arsenide; indium compounds; liquid phase epitaxial growth; optical communication equipment; semiconductor junction lasers; BH lasers; InGaAsP; LDE; MQW lasers; dynamic spectral linewidth; linewidths; semiconductors; well width;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870164
  • Filename
    4257490
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1030476