• DocumentCode
    1030498
  • Title

    Low-loss ridge optical waveguides in quarternary InGaAlAs/InP grown by MBE

  • Author

    Cinguino, P. ; Genova, F. ; Morasca, Sandro ; Rigo, C. ; Stano, A.

  • Author_Institution
    CSELT¿Centro Studi e Laboratori Telecomunicazioni, Torino, Italy
  • Volume
    23
  • Issue
    5
  • fYear
    1987
  • Firstpage
    235
  • Lastpage
    236
  • Abstract
    Low-loss waveguiding at 1.55 ¿m wavelenght in quarternary InGaAlAs grown on InP by molecular-beam epitaxy is demonstrated for the first time. Ridge waveguides with length up to 1.8 cm width between 1.3 and 50 ¿m have losses as low as 2.2dB/cm, showing the potential of this materials systems for high-performance waveguide devices.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optical waveguides; 1.55 micron; 1.8 cm; In GaAlAs-InP; InP; MBE; high-performance waveguide devices; low loss optical waveguides; molecular-beam epitaxy; ridge optical waveguides;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870166
  • Filename
    4257492
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1030498