DocumentCode
1030552
Title
An improved dispersion relationship for the p-n junction avalanche diode
Author
Manasse, Fred K. ; Shapiro, Jonathan S.
Author_Institution
Princeton University, Princeton, N.J.
Volume
15
Issue
5
fYear
1968
fDate
5/1/1968 12:00:00 AM
Firstpage
282
Lastpage
289
Abstract
A tractable and more physically realistic dispersion relationship for the avalanche diode than previously available has been developed, This includes terms relating to the differences in hole and electron velocities and ionization coefficients. Analysis of this modified dispersion relation indicates new ranges for instabilities. Plots for selected cases are presented.
Keywords
AC generators; Charge carrier processes; Diodes; Dispersion; Electron mobility; Helium; Ionization; Nonlinear equations; P-n junctions;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1968.16179
Filename
1475081
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