Integration of waveguides and photodetectors in SiGe for 1.3 μm operation

Author

Splett, A. ; Zinke, T. ; Petermann, K. ; Kasper, E. ; Kibbel, H. ; Herzog, H.-J. ; Presting, H.

Author_Institution

Inst. fur Hochfrequenztech., Tech. Univ. Berlin, Germany

Volume

6

Issue

1

fYear

1994

Firstpage

59

Lastpage

61

Abstract

The integration of single-mode rib waveguides and photodetectors in silicon using MBE-grown SiGe-layers is reported. Short photodetectors exhibit dark currents below 200 nA at 7 V reverse bias. For the fiber-waveguide-detector coupling an overall quantum efficiency of 11% has been achieved at 7 V reverse bias for /spl lambda/=1.3 μm. The maximum bandwidth is 2 GHz.

Keywords

Ge-Si alloys; infrared detectors; integrated optics; integrated optoelectronics; optical waveguides; photodetectors; semiconductor materials; 1.3 micron; 11 percent; 2 GHz; 2.5 Gbit/s; 200 nA; 7 V; MBE-grown SiGe-layers; Si; SiGe-Si; dark currents; fiber-waveguide-detector coupling; integration; maximum bandwidth; photodetectors; quantum efficiency; reverse bias; short photodetectors; silicon; single-mode rib waveguides; waveguides; Absorption; Detectors; Germanium silicon alloys; Integrated optics; Molecular beam epitaxial growth; Optical receivers; Optical waveguides; Photodetectors; Silicon germanium; Sputter etching;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.265889

Filename

265889