DocumentCode
1030576
Title
Transistor noise at high injection levels
Author
Tong, Alvin H. ; Van der Ziel, Albert
Author_Institution
IBM Corporation, East Fishkill Facility, Hopewell Junction, N.Y.
Volume
15
Issue
5
fYear
1968
fDate
5/1/1968 12:00:00 AM
Firstpage
307
Lastpage
313
Abstract
Measurements of transistor noise at high injection levels are compared with the predictions made by the low-level injection theory, The noise is represented by an emf ee in series with the emitter and a current generator i in parallel with the collector: ee is split into a part ee \´ fully correlated with
and a part ee " uncorrelated with
. The measured values of
usually agree very well with theory, even at high currents; this indicates that the low-level injection theory of
remains correct at high injection levels. The measurements of
, though inaccurate, seem to indicate that the predictions made by the low-level injection theory are approximately correct at high injection levels. The measurements of the cross correlation
indicate a large discrepancy with the low-level injection theory. The theory predicts that
is quite small at low frequency and is mainly imaginary at high frequencies. The measurements indicate that
is quite large at low frequencies and that its real part is larger than the imaginary part at high frequencies. The fact that
varies as
, so that it approaches zero at low currents, indicates that it is a high-level injection effect.
and a part e
. The measured values of
usually agree very well with theory, even at high currents; this indicates that the low-level injection theory of
remains correct at high injection levels. The measurements of
, though inaccurate, seem to indicate that the predictions made by the low-level injection theory are approximately correct at high injection levels. The measurements of the cross correlation
indicate a large discrepancy with the low-level injection theory. The theory predicts that
is quite small at low frequency and is mainly imaginary at high frequencies. The measurements indicate that
is quite large at low frequencies and that its real part is larger than the imaginary part at high frequencies. The fact that
varies as
, so that it approaches zero at low currents, indicates that it is a high-level injection effect.Keywords
Broadband amplifiers; Circuit noise; Current measurement; Electric resistance; Electric variables; Electrical resistance measurement; Frequency; Harmonic distortion; Noise level; Thermal resistance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1968.16182
Filename
1475084
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