• DocumentCode
    1030576
  • Title

    Transistor noise at high injection levels

  • Author

    Tong, Alvin H. ; Van der Ziel, Albert

  • Author_Institution
    IBM Corporation, East Fishkill Facility, Hopewell Junction, N.Y.
  • Volume
    15
  • Issue
    5
  • fYear
    1968
  • fDate
    5/1/1968 12:00:00 AM
  • Firstpage
    307
  • Lastpage
    313
  • Abstract
    Measurements of transistor noise at high injection levels are compared with the predictions made by the low-level injection theory, The noise is represented by an emf eein series with the emitter and a current generator i in parallel with the collector: eeis split into a part ee\´ fully correlated with i and a part ee" uncorrelated with i . The measured values of \\bar{i^{2}} usually agree very well with theory, even at high currents; this indicates that the low-level injection theory of \\bar{i^{2}} remains correct at high injection levels. The measurements of e_{\\overline{e^{\\prime \\prime 2}}} , though inaccurate, seem to indicate that the predictions made by the low-level injection theory are approximately correct at high injection levels. The measurements of the cross correlation \\bar{e_{e}i^{*}} indicate a large discrepancy with the low-level injection theory. The theory predicts that \\bar{e_{e}i^{*}} is quite small at low frequency and is mainly imaginary at high frequencies. The measurements indicate that \\bar{e_{e}i^{*}} is quite large at low frequencies and that its real part is larger than the imaginary part at high frequencies. The fact that \\bar{e_{e}i^{2}} varies as \\sqrt {I_{E}} , so that it approaches zero at low currents, indicates that it is a high-level injection effect.
  • Keywords
    Broadband amplifiers; Circuit noise; Current measurement; Electric resistance; Electric variables; Electrical resistance measurement; Frequency; Harmonic distortion; Noise level; Thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1968.16182
  • Filename
    1475084