A four-channel monolithic optical/electronic selector for fast packet-switched WDMA networks

Author

Tong, F. ; Kwark, Y.H. ; Stevens, A.E.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

6

Issue

1

fYear

1994

Firstpage

68

Lastpage

70

Abstract

We report the characteristics of a four-channel monolithic GaAs optical/electronic selector for applications in fast packet-switched wavelength division multiaccess networks. The selector chip consists of four metal-semiconductor-metal photodetectors sharing a single differential transimpedance amplifier selected by four enhancement-mode MESFET switches. The channel switching time is about 2 ns and no appreciable crosstalk is observed from neighboring channels.<>

Keywords

III-V semiconductors; field effect integrated circuits; frequency division multiple access; gallium arsenide; infrared detectors; integrated optoelectronics; metal-semiconductor-metal structures; optical links; packet switching; photodetectors; semiconductor switches; 0.85 micron; 2 ns; GaAs; channel switching time; crosstalk; enhancement-mode MESFET switches; fast packet-switched WDMA networks; four-channel monolithic optical/electronic selector; metal-semiconductor-metal photodetectors; monolithic GaAs optical/electronic selector; selector chip; single differential transimpedance amplifier; wavelength division multiaccess networks; Differential amplifiers; Gallium arsenide; MESFETs; Optical amplifiers; Optical crosstalk; Optical fiber networks; Optical packet switching; Optical switches; Photodetectors; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.265892

Filename

265892