Title :
Noise in self-electrooptic effect device logic gates
Author :
Yu, Song ; Forrest, Stephen R.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
We study the fundamental noise processes of SEED-based logic gates. The noise is calculated for symmetric SEEDs (S-SEEDs), asymmetric Fabry-Perot S-SEEDs (ASFP S-SEEDs), and SEEDs combined with transistor driving circuits (FET-SEEDs). The source of noise which determines the minimum power required to switch the SEEDs in a given time increment is quantum noise associated with photon absorption and subsequent carrier or exciton recombination. The results show that FET-SEED logic gates have the lowest noise power as compared with S-SEEDs and ASFP S-SEEDs.<>
Keywords :
SEEDs; logic gates; optical logic; semiconductor device noise; FET-SEED logic gates; FET-SEEDs; S-SEEDs; SEED-based logic gates; asymmetric Fabry-Perot S-SEEDs; carrier recombination; exciton recombination; fundamental noise processes; lowest noise power; minimum power; photon absorption; quantum noise; self-electrooptic effect device logic gates; symmetric SEEDs; time increment; transistor driving circuits; Bandwidth; Circuit noise; Fabry-Perot; Frequency; Logic devices; Logic gates; Optical noise; P-i-n diodes; Switches; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
