Noise in self-electrooptic effect device logic gates

Author

Yu, Song ; Forrest, Stephen R.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

Volume

6

Issue

1

fYear

1994

Firstpage

74

Lastpage

76

Abstract

We study the fundamental noise processes of SEED-based logic gates. The noise is calculated for symmetric SEEDs (S-SEEDs), asymmetric Fabry-Perot S-SEEDs (ASFP S-SEEDs), and SEEDs combined with transistor driving circuits (FET-SEEDs). The source of noise which determines the minimum power required to switch the SEEDs in a given time increment is quantum noise associated with photon absorption and subsequent carrier or exciton recombination. The results show that FET-SEED logic gates have the lowest noise power as compared with S-SEEDs and ASFP S-SEEDs.<>

Keywords

SEEDs; logic gates; optical logic; semiconductor device noise; FET-SEED logic gates; FET-SEEDs; S-SEEDs; SEED-based logic gates; asymmetric Fabry-Perot S-SEEDs; carrier recombination; exciton recombination; fundamental noise processes; lowest noise power; minimum power; photon absorption; quantum noise; self-electrooptic effect device logic gates; symmetric SEEDs; time increment; transistor driving circuits; Bandwidth; Circuit noise; Fabry-Perot; Frequency; Logic devices; Logic gates; Optical noise; P-i-n diodes; Switches; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.265894

Filename

265894