Title :
Design and realisation of high-gain 1.5 μm semiconductor TW optical amplifiers
Author :
Brosson, P. ; Fernier, B. ; Benoit, J. ; Simon, J.C. ; Landousies, B.
Author_Institution :
CR-CGE, Laboratoires de Marcoussis, Marcoussis, France
Abstract :
The influence of the waveguide parameters, leakage current, electrical and thermal resistances on the maximum linear gain and the corresponding tuning wavelength of buried-heterostructure (BH) semiconductor travelling-wave optical amplifiers (TWAs) operating around 1.5 μm is theoretically analysed. A 26 dB gain TWA has been designed and fabricated from a 400 μm-long BH laser with a 0.2 μm-thick active layer by using low-reflectivity SiO (R ≈ 6 × 10-4) coatings.
Keywords :
semiconductor junction lasers; waveguides; 1.5 micron; 26 dB; BH laser; SiO coatings; active layer; leakage current; maximum linear gain; semiconductor travelling-wave optical amplifiers; thermal resistances; tuning wavelength; waveguide parameters;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870186
