DocumentCode

1030809

Title

Al2O3-SiO2IGFET integrated circuits

Author

Cheney, G.T. ; Jacobs, Ryan M.

Volume

15

Issue

6

fYear

1968

fDate

6/1/1968 12:00:00 AM

Firstpage

410

Lastpage

410

Keywords

Aluminum oxide; Circuits; Dielectrics; Etching; Logic arrays; Metallization; Shift registers; Silicon; Switches; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1968.16206

Filename

1475108