Title :
Low-leakage InGaAs photodiodes grown on gaAs substrates using a graded strained-layer superlattice
Author :
Hodson, P.D. ; Wallis, R.H. ; Davies, J.I.
Author_Institution :
Plessey Research (Caswell) Limited, Towcester, UK
Abstract :
InxGa1¿xAs layers with In concentrations up to 35% have been grown on GaAs substrates by MOCVD using a GaAs/InxGa1¿xAs superlattice with graded layer thicknesses to accommodate the lattice mismatch. 105 ¿m-diameter PIN diodes fabricated from this material have leakage currents below 1 nA at ¿ 10 V, comparable to devices from lattice-matched material on InP substrates.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; leakage currents; photodiodes; semiconductor superlattices; GaAs substrates; GaAs-InxGa1-xAs superlattice; InGaAs photodiodes; MOCVD; PIN diodes; graded strained-layer superlattice; lattice mismatch; leakage currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870199
