DocumentCode

1030856

Title

Conductance of MOS transistors in saturation

Author

Frohman-Bentchkowsky, D. ; Grove, A.S.

Volume

15

Issue

6

fYear

1968

fDate

6/1/1968 12:00:00 AM

Firstpage

411

Lastpage

411

Keywords

Absorption; Conducting materials; Detectors; Dielectrics; Electron traps; Kinetic energy; MOSFETs; Semiconductor materials; Tellurium; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1968.16212

Filename

1475114