• DocumentCode
    1030894
  • Title

    Low-noise 8 GHz PIN/FET optical receiver

  • Author

    Gimlett, J.L.

  • Author_Institution
    Bell Communication Research, Red Bank, USA
  • Volume
    23
  • Issue
    6
  • fYear
    1987
  • Firstpage
    281
  • Lastpage
    283
  • Abstract
    An ultrawide-bandwidth, low-noise optical receiver has been designed for use in both multigigabit direct-detection or coherent heterodyne systems at 1.3 and 1.55 ¿m wavelengths. The receiver consists of a low-capacitance InGaAs PIN photodiode connected to a high-impedance three-stage GaAs FET preamplifier. Inductive peaking at the front end is used to reduce the receiver noise at high frequencies. The receiver has an equivalent input RMS noise current of < 12 pA/¿Hz from 4 to 7 GHz. The measured 3 dB bandwidth of 8 GHz is the widest receiver bandwidth reported to date.
  • Keywords
    III-V semiconductors; electron device noise; field effect transistor circuits; gallium arsenide; indium compounds; optical communication equipment; photodetectors; photodiodes; preamplifiers; solid-state microwave circuits; 1.3 micron; 1.55 micron; 8 GHz; GaAs; InGaAs; InGaAs PIN photodiode; PIN/FET optical receiver; coherent heterodyne systems; input RMS noise current; low-noise optical receiver; multigigabit direct detection systems; receiver bandwidth; receiver noise; three-stage GaAs FET preamplifier; ultrawide-bandwidth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870205
  • Filename
    4257532