• DocumentCode
    1030938
  • Title

    Low-temperature process for high-mobility polysilicon TFTs

  • Author

    Loisel, B. ; Chouan, Y. ; Pedrono, N. ; Joubert, P.

  • Author_Institution
    Centre National d´´Etudes des Télécommunications, LAB-ROC/TIC, Lannion, France
  • Volume
    23
  • Issue
    6
  • fYear
    1987
  • Firstpage
    288
  • Lastpage
    289
  • Abstract
    Thin-film transistors (TFTs) have been realised by a low-temperature (T¿ 580°C), short process, on polycrystalline silicon thin films deposited by PECVD on glass. Field-effect mobility up to 35cm2V-1s-1 has been measured on such devices.
  • Keywords
    chemical vapour deposition; elemental semiconductors; flat panel displays; semiconductor growth; silicon; thin film transistors; 580 C; PECVD; field effect mobility; flat panel display applications; high mobility poly-Si; low temperature process; polycrystalline Si; semiconductors; thin film transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870209
  • Filename
    4257536
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1030938