• DocumentCode
    1030984
  • Title

    InP/GaInAs heterojunction bipolar transistors with improved electrical characteristics grown on strained buffer layers

  • Author

    Emeis, N. ; Beneking, H.

  • Author_Institution
    Technical University of Aachen, Institute of Semiconductor Electronics, Aachen, West Germany
  • Volume
    23
  • Issue
    6
  • fYear
    1987
  • Firstpage
    295
  • Lastpage
    296
  • Abstract
    In the InP/GaInAs material system heterojunction bipolar transistors have been fabricated on isoelectronically doped InP buffer layers. The greatly improved performance of the B¿E diodes, especially at low forward bias, is reflected in the improved behaviour of bipolar transistors.
  • Keywords
    III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; semiconductor technology; InP; InP-GaInAs; base emitter diode; behaviour of bipolar transistors; heterojunction bipolar transistors; isoelectronically doped InP buffer layers; low forward bias; performance; semiconductors; strained buffer layers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870214
  • Filename
    4257541
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1030984