DocumentCode

1031016

Title

A 200-MHz 300°C gallium arsenide MIS transistor

Author

Becke, H.W. ; White, J.P.

Volume

15

Issue

6

fYear

1968

fDate

6/1/1968 12:00:00 AM

Firstpage

414

Lastpage

415

Keywords

Frequency; Gain; Gallium arsenide; Geometry; Insulation; Laboratories; MOSFETs; Microwave FETs; Performance analysis; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1968.16228

Filename

1475130