Title :
A 200-MHz 300°C gallium arsenide MIS transistor
Author :
Becke, H.W. ; White, J.P.
fDate :
6/1/1968 12:00:00 AM
Keywords :
Frequency; Gain; Gallium arsenide; Geometry; Insulation; Laboratories; MOSFETs; Microwave FETs; Performance analysis; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16228
