Title :
20 GHz dynamic frequency divider with GaAs advanced SAINT and air-bridge technology
Author :
Osafune, K. ; Enoki, Tsutomu ; Muraguchi, M. ; Ohwada, Kazunari
Author_Institution :
NTT Atsugi Electrical Communication Laboratories, Atsugi, Japan
Abstract :
A GaAs BFL dynamic binary frequency divider is designed and fabricated using advanced SAINT with asymmetric n+-layers and air-bridge technology. Operation above 20 GHz is achieved due to advanced SAINT FETs with 0.3 ¿m gate length and the reduction of parasitic capacitances between interlayer lines.
Keywords :
III-V semiconductors; counting circuits; field effect integrated circuits; frequency dividers; gallium arsenide; integrated circuit technology; integrated logic circuits; 20 GHz; 20 GHz dynamic frequency divider; BFL dynamic binary frequency divider; GaAs; air-bridge technology; interlayer lines; reduction of parasitic capacitances;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870218
