DocumentCode :
1031072
Title :
Characterization of MOSFETs formed by gate masked ion implantation technique
Author :
Bower, R.W. ; Dill, H.G. ; Aubuchon, K.G. ; Thompson, S.A.
Volume :
15
Issue :
6
fYear :
1968
fDate :
6/1/1968 12:00:00 AM
Firstpage :
415
Lastpage :
415
Keywords :
Boron; Capacitance; Doping; Frequency response; Insulation; Ion implantation; MOSFETs; Silicon; Stability; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1968.16234
Filename :
1475136
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1031072
