مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

1031091

Title :

Double-diffused MOS transistors

Author :

Harris, R.E.

Volume :

Issue :

fYear :

1968

fDate :

6/1/1968 12:00:00 AM

Firstpage :

415

Lastpage :

415

Keywords :

Capacitance; Diodes; Doping; Germanium; Impedance; MOSFETs; Semiconductor thin films; Silicon; Substrates; Thermal conductivity;

fLanguage :

English

Journal_Title :

Electron Devices, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/T-ED.1968.16236

Filename :

1475138

Link To Document :