Title :
Bonding silicon wafer to silicon nitride with spin-on glass as adhesive
Author :
Yamada, Akimasa ; Kawasaki, T. ; Kawashima, Mitsumasa
Author_Institution :
Sumitomo Metal Mining Co. Ltd., Electronics Materials Laboratory, Tokyo, Japan
Abstract :
Using spin-on glass (SOG) as an adhesive, an Si wafer with thermal oxide was successfully bonded to one with an RF-sputtered Si3N4 film. This ensures that SOG films are effective in bonding Si wafers to less reactive surfaces than Si or SiO2 such as silicon nitride. It was also found that the previously reported bonding procedure can be simplified by suppressing the spin-induced radial striations of the SOG films.
Keywords :
elemental semiconductors; field effect integrated circuits; semiconductor technology; silicon; silicon compounds; 3D IC technology; RF-sputtered Si3N4 film; SOG films; Si-Si3N4 wafer; Si-SiO2 wafer; bonding Si wafers; bonding procedure; spin-on glass as adhesive;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870233
