Stripe domain confinement by laser annealing

In Bloch Line Memory (BLM) stripe domains need to be locally stabilized. Several methods such as grooving, ion-implantation, evaporation of Cr or thin films of high coercive force, have already been considered. These take advantage of local variation of film thickness or anisotropy or demagnetizing fields. In each of these schemes, stability of Vertical Bloch Lines in the confined stripe, or coexistence of bubbles and stripes (bubbles are used for writing and reading in BLM) remains unsolved. We propose to stabilize stripes domain by a local variation of magnetization induced by laser annealing of Ga containing garnet films.