DocumentCode :
1031259
Title :
Gain saturation dependence on signal wavelength in a travelling-wave semiconductor laser amplifier
Author :
Inoue, Ken ; Mukai, Toshiharu ; Saitoh, Takashi
Author_Institution :
NTT Electrical Communications Laboratories, Yokosuka, Japan
Volume :
23
Issue :
7
fYear :
1987
Firstpage :
328
Lastpage :
329
Abstract :
Gain saturation dependence on signal wavelength in a 1.5 ¿m InGaAsP travelling-wave semiconductor laser amplifier is experimentally studied. Saturation output powers were 6.9dBm, 8.3dBm and 10.6dBm for signal wavelengths of 1490 nm, 1510 nm and 1540 nm, respectively. This saturation dependence on wavelength, i.e. higher saturation output power for longer signal wavelength, results from signal gain peak shift towards longer wavelength with increasing input power.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 1490 nm; 1510 nm; 1540 nm; InGaAsP; gain saturation; laser TWA; saturation dependence on signal wavelength; saturation output power; signal gain peak shift; travelling-wave semiconductor laser amplifier;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19870243
Filename :
4257571
Link To Document :
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