DocumentCode
1031259
Title
Gain saturation dependence on signal wavelength in a travelling-wave semiconductor laser amplifier
Author
Inoue, Ken ; Mukai, Toshiharu ; Saitoh, Takashi
Author_Institution
NTT Electrical Communications Laboratories, Yokosuka, Japan
Volume
23
Issue
7
fYear
1987
Firstpage
328
Lastpage
329
Abstract
Gain saturation dependence on signal wavelength in a 1.5 ¿m InGaAsP travelling-wave semiconductor laser amplifier is experimentally studied. Saturation output powers were 6.9dBm, 8.3dBm and 10.6dBm for signal wavelengths of 1490 nm, 1510 nm and 1540 nm, respectively. This saturation dependence on wavelength, i.e. higher saturation output power for longer signal wavelength, results from signal gain peak shift towards longer wavelength with increasing input power.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 1490 nm; 1510 nm; 1540 nm; InGaAsP; gain saturation; laser TWA; saturation dependence on signal wavelength; saturation output power; signal gain peak shift; travelling-wave semiconductor laser amplifier;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870243
Filename
4257571
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