Title :
InSb photodiodes, with high reverse breakdown voltage
Author :
Protschka, H.A. ; Shang, D.C.
fDate :
6/1/1968 12:00:00 AM
Keywords :
Breakdown voltage; Capacitance; P-i-n diodes; P-n junctions; Photodiodes; Photovoltaic systems; Silicon carbide; Solar power generation; Temperature dependence; Wavelength measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16253
