• DocumentCode
    1031265
  • Title

    InSb photodiodes, with high reverse breakdown voltage

  • Author

    Protschka, H.A. ; Shang, D.C.

  • Volume
    15
  • Issue
    6
  • fYear
    1968
  • fDate
    6/1/1968 12:00:00 AM
  • Firstpage
    418
  • Lastpage
    418
  • Keywords
    Breakdown voltage; Capacitance; P-i-n diodes; P-n junctions; Photodiodes; Photovoltaic systems; Silicon carbide; Solar power generation; Temperature dependence; Wavelength measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1968.16253
  • Filename
    1475155
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1031265