Title :
Gain, polarisation sensitivity and saturation power of 1.5 μm near-travelling-wave semiconductor laser amplifier
Author :
Simon, J.C. ; Landousies, B. ; Bossis, Y. ; Doussiere, P. ; Fernier, B. ; Padioleau, C.
Author_Institution :
CNET, LAB/ROC/FOG, Lannion, France
Abstract :
Gain, saturation and polarisation characteristics of a near-travelling-wave 1.5,μm BH semiconductor laser amplifier are reported. An internal cavity peak TE gain of 26.8 ± 0.5 dB with a gain ripple of 2.9 ± 0.1 dB, and TE saturation output power of 3.5±1.5dB at 22.2±0.5dB small-signal gain have been achieved.
Keywords :
semiconductor junction lasers; 1.5 micron; 26.5 dB; BH semiconductor laser amplifier; gain characteristics; gain ripple; internal cavity peak TE gain; near-travelling-wave semiconductor laser amplifier; polarisation characteristics; polarisation sensitivity; saturation characteristics; saturation output power; saturation power; small-signal gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870246
